"A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density ..."

Mario Sako et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185237

access: closed

type: Conference or Workshop Paper

metadata version: 2025-05-29

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Mario Sako, T. Nakajima, Fumihiro Kono, Takeshi Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Yutaka Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, Masahiro Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Yoshihisa Watanabe:
A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm² bit density with 3.2Gbps interface and 205MB/s program throughput. VLSI Technology and Circuits 2023: 1-2

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