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"Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into ..."

Yi-Chun Liu et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185327

access: closed

type: Conference or Workshop Paper

metadata version: 2024-01-03

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  - conf/vlsit/LiuCCLHTHCCCL23
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Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, Chee Wee Liu:
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V. VLSI Technology and Circuits 2023: 1-2

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