![](https://dblp.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
default search action
"Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets."
H.-B. Jo et al. (2022)
- H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, SW. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. VLSI Technology and Circuits 2022: 397-398
![](https://dblp.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.