"Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between ..."

Zhouhang Jiang et al. (2022)

> Home

Details and statistics

DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830172

access: closed

type: Conference or Workshop Paper

metadata version: 2024-09-13

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/JiangXCMDSBJCAN22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/JiangXCMDSBJCAN22
Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. VLSI Technology and Circuits 2022: 395-396

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.