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"Ultra-high Tunneling Electroresistance Ratio (2 × 104) ..."

Junghyeon Hwang et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185231

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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  - conf/vlsit/HwangKSKPJ23
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Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon:
Ultra-high Tunneling Electroresistance Ratio (2 × 10⁴) & Endurance (10⁸) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 10³) Ferroelectric Tunnel Junction. VLSI Technology and Circuits 2023: 1-2

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