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"3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers ..."

E. R. Hsieh et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185226

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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E. R. Hsieh, Y. T. Tang, C. R. Liu, S. M. Wang, Y. L. Hsueh, R. Q. Lin, Y. X. Huang, Y. T. Chen:
3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching. VLSI Technology and Circuits 2023: 1-2

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