"Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics."

N. K. Kranthi, Radhakrishnan Sithanandam, Rama Komaragiri (2015)

Details and statistics

DOI: 10.1109/VLSID.2015.54

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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