"A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS ..."

Min-Woong Seo et al. (2021)

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DOI: 10.23919/VLSICIRCUITS52068.2021.9492357

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type: Conference or Workshop Paper

metadata version: 2023-03-16

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Min-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Junan Lee, Sung-Yong Kim, Jongyeon Lee, Sung-Jae Byun, Daehee Bae, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Changrok Moon, Kyupil Lee, Hyoung-Sub Kim:
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. VLSI Circuits 2021: 1-2

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