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"A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes."

Shourya Gupta, Daniel S. Truesdell, Benton H. Calhoun (2020)

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DOI: 10.1109/VLSICIRCUITS18222.2020.9162772

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-24

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Shourya Gupta, Daniel S. Truesdell, Benton H. Calhoun:
A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes. VLSI Circuits 2020: 1-2

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