"A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing ..."

Sebastian Kiesel et al. (2019)

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DOI: 10.1109/VLSI-DAT.2019.8741536

access: closed

type: Conference or Workshop Paper

metadata version: 2019-06-27

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Sebastian Kiesel, Thomas Kern, Bernhard Wicht, Helmut Graeb:
A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application. VLSI-DAT 2019: 1-4

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