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"A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for ..."

Farabi Ibne Jamal et al. (2017)

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DOI: 10.1109/RWS.2017.7885955

access: closed

type: Conference or Workshop Paper

metadata version: 2019-03-12

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Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel:
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS 2017: 94-97

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