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"Suitability of FinFET introduction into eDRAM cells for operate at ..."

Esteve Amat et al. (2017)

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DOI: 10.1109/PATMOS.2017.8106951

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-06

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  dblp key:
  - conf/patmos/AmatCCR17
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Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio:
Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. PATMOS 2017: 1-6

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