"A new Tunnel-FET based RAM concept for ultra-low power applications."

Mostafizur Rahman et al. (2014)

> Home

Details and statistics

DOI: 10.1109/NANOARCH.2014.6880505

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-23

- view
  authority control:
- export record
  dblp key:
  - conf/nanoarch/RahmanLSKM14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/nanoarch/RahmanLSKM14
Mostafizur Rahman, Mingyu Li, Jiajun Shi, Santosh Khasanvis, Csaba Andras Moritz:
A new Tunnel-FET based RAM concept for ultra-low power applications. NANOARCH 2014: 57-58

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.