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"A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology."

Giovanni Naso et al. (2013)

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DOI: 10.1109/ISSCC.2013.6487707

access: closed

type: Conference or Workshop Paper

metadata version: 2021-12-08

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  dblp key:
  - conf/isscc/NasoBCCCCDSCFGGILMMMOPPPPRRRSSSSTMGFVHG13
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  persistent URL:
  - https://dblp.org/rec/conf/isscc/NasoBCCCCDSCFGGILMMMOPPPPRRRSSSSTMGFVHG13
Giovanni Naso, L. Botticchio, M. Castelli, C. Cerafogli, M. Cichocki, P. Conenna, Andrea D'Alessandro, Luca De Santis, Domenico Di Cicco, W. Di Francesco, M. L. Gallese, Girolamo Gallo, Michele Incarnati, C. Lattaro, Agostino Macerola, G. G. Marotta, Violante Moschiano, D. Orlandi, F. Paolini, S. Perugini, Luigi Pilolli, P. Pistilli, G. Rizzo, F. Rori, Massimo Rossini, Giovanni Santin, Emanuele Sirizotti, A. Smaniotto, U. Siciliani, Marco Tiburzi, R. Meyer, A. Goda, B. Filipiak, Tommaso Vali, Mark Helm, Ramin Ghodsi:
A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology. ISSCC 2013: 218-219

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