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"A 130.7mm² 2-layer 32Gb ReRAM memory device in 24nm technology."

Tz-Yi Liu et al. (2013)

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DOI: 10.1109/ISSCC.2013.6487703

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-10

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  dblp key:
  - conf/isscc/LiuYSCLBYZYOSAACGHJKLMMNPPSWYPKHWNTHMGTYOOTHIFMSQ13
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  persistent URL:
  - https://dblp.org/rec/conf/isscc/LiuYSCLBYZYOSAACGHJKLMMNPPSWYPKHWNTHMGTYOOTHIFMSQ13
Tz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Sravanti Addepalli, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Saurabh Joshi, Achal Kathuria, Vincent Lai, Deep Masiwal, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Ronald Yin, Liping Peng, Jang Yong Kang, Sharon Huynh, Huijuan Wang, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Takahiko Hara, Hirofumi Inoue, Luca Fasoli, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader:
A 130.7mm² 2-layer 32Gb ReRAM memory device in 24nm technology. ISSCC 2013: 210-211

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