"17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a ..."

Meng-Fan Chang et al. (2015)

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DOI: 10.1109/ISSCC.2015.7063052

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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Meng-Fan Chang, Chien-Fu Chen, Ting-Hao Chang, Chi-Chang Shuai, Yen-Yao Wang, Hiroyuki Yamauchi:
17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme. ISSCC 2015: 1-3

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