"A 300 mV 10 MHz 4 kb 10T subthreshold SRAM for ultralow-power application."

Wei-Bin Yang et al. (2012)

Details and statistics

DOI: 10.1109/ISPACS.2012.6473561

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-23

a service of  Schloss Dagstuhl - Leibniz Center for Informatics