"A 28-nm 10.4-fJ/b Cryogenic embedded DRAM with 3T1C Gain Cell and MBIST at ..."

Jiapei Zheng et al. (2024)

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DOI: 10.1109/ISOCC62682.2024.10762394

access: closed

type: Conference or Workshop Paper

metadata version: 2024-12-19

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Jiapei Zheng, Xinkai Nie, Zhenghang Zhi, Zhidong Tang, Qi Liu, Xufeng Kou, Chixiao Chen:
A 28-nm 10.4-fJ/b Cryogenic embedded DRAM with 3T1C Gain Cell and MBIST at 4-Kelvin. ISOCC 2024: 306-307

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