"Write Bias Scheme Optimization of Ferroelectric Field-Effect-Transistor ..."

Seungmin Kang, Sangwan Kim, Sihyun Kim (2024)

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DOI: 10.1109/ISOCC62682.2024.10762218

access: closed

type: Conference or Workshop Paper

metadata version: 2024-12-19

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Seungmin Kang, Sangwan Kim, Sihyun Kim:
Write Bias Scheme Optimization of Ferroelectric Field-Effect-Transistor (FeFET) Synapse for Accurate On-chip Training. ISOCC 2024: 153-154

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