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"0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast ..."
E. Shen, J. B. Kuo (2002)
- E. Shen, J. B. Kuo:
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems. ISCAS (4) 2002: 583-586
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