Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast ..."

E. Shen, J. B. Kuo (2002)

> Home

Details and statistics

DOI: 10.1109/ISCAS.2002.1010523

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iscas/ShenK02
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iscas/ShenK02
E. Shen, J. B. Kuo:
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems. ISCAS (4) 2002: 583-586

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.