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"Floating-gate EEPROM cell: threshold voltage sensibility to geometry."

Jean-Michel Portal, L. Forli, Didier Née (2002)

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DOI: 10.1109/ISCAS.2002.1009901

access: closed

type: Conference or Workshop Paper

metadata version: 2021-12-24

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Jean-Michel Portal, L. Forli, Didier Née:
Floating-gate EEPROM cell: threshold voltage sensibility to geometry. ISCAS (1) 2002: 557-560

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