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"Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV ..."
Shengnan Zhu et al. (2021)
- Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan:
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS 2021: 1-7
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