"Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs."

Junji Senzaki et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764475

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi:
Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. IRPS 2022: 63-1

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