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"The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case ..."
Peter Moens et al. (2023)
- Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij:
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS 2023: 1-5
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