"Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs."

Tianshi Liu et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9129486

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal:
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS 2020: 1-5

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