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"Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to ..."

Camille Leurquin et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764482

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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  - conf/irps/LeurquinVVGESDI22
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Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant:
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. IRPS 2022: 10

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