"NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote ..."

Songyi Jiang et al. (2025)

> Home

Details and statistics

DOI: 10.1109/IRPS48204.2025.10983209

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/JiangLYLSYWWLW25
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/JiangLYLSYWWLW25
Songyi Jiang, Junjie Li, Hong Yang, Qianqian Liu, Yunfei Shi, Shuai Yang, Runsheng Wang, Xiaolei Wang, Jun Luo, Wenwu Wang:
NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment. IRPS 2025: 56

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.