"Reliability of next-generation field-effect transistors with transition ..."

Yury Yu. Illarionov et al. (2018)

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DOI: 10.1109/IRPS.2018.8353605

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-26

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Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser:
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS 2018: 5

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