default search action
"Interface Engineering of Trench-Ox for Modern DRAM Devices."
Soojung Hwang et al. (2024)
- Soojung Hwang, Jongkyu Kim, Juntae Kim, Dahyun Cha, Minho Kim, Dongkyu Jang, Sunghak Cho, Seokhyang Kim, Jaeseong Park, Hyungjoon Kim, Sukwon Yu, Boyoung Song, Hyodong Ban:
Interface Engineering of Trench-Ox for Modern DRAM Devices. IRPS 2024: 1-4
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.