"Effect of High Temperature RF Stress on the Trapping Behavior of Carbon ..."

Lyes Ben Hammou et al. (2025)

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DOI: 10.1109/IRPS48204.2025.10983377

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-04

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Lyes Ben Hammou, François Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, Farid Medjdoub, Gilles Patriarche:
Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs. IRPS 2025: 1-8

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