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"SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage ..."

Patrick Fiorenza et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764490

access: closed

type: Conference or Workshop Paper

metadata version: 2023-10-28

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  - conf/irps/FiorenzaBMSGR22
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  - https://dblp.org/rec/conf/irps/FiorenzaBMSGR22
Patrick Fiorenza, Corrado Bongiorno, Angelo Alberto Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte:
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs. IRPS 2022: 3

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