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"First Study of P-Channel Vertical Split-Gate Flash Memory Device with ..."

Cheng-Lin Sung et al. (2021)

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DOI: 10.1109/IMW51353.2021.9439626

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-19

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  - conf/imw2/SungLCHWL21
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Cheng-Lin Sung, Hang-Ting Lue, Wei-Chen Chen, Tzu-Hsuan Hsu, Keh-Chung Wang, Chih-Yuan Lu:
First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits. IMW 2021: 1-4

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