"The Effect of High Temperature Ion Implantation on the Performance of ..."

Hao Liu et al. (2021)

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DOI: 10.1109/ICTA53157.2021.9661958

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-08

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Hao Liu, Liang Tian, Kaibing Qiu, Jun Shi, Longxin Shi:
The Effect of High Temperature Ion Implantation on the Performance of 1.2kV 4H-SiC MOSFETs. ICTA 2021: 20-21

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