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"Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate ..."

Badreddine Zerroumda et al. (2018)

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DOI: 10.1145/3330089.3330470

access: closed

type: Conference or Workshop Paper

metadata version: 2022-03-18

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Badreddine Zerroumda, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati:
Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. ICSENT 2018: 35:1-35:5

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