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"Trapping induced parasitic effects in GaN-HEMT for power switching ..."

Gaudenzio Meneghesso et al. (2015)

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DOI: 10.1109/ICICDT.2015.7165899

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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  - conf/icicdt/MeneghessoMZVM15
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Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens:
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT 2015: 1-4

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