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"Design and Optimization of N-type SiC Gate Turn-off Thyristor with High ..."

Hongming Ma, Yan Wang (2021)

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DOI: 10.1109/ICICDT51558.2021.9626399

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Hongming Ma, Yan Wang:
Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage. ICICDT 2021: 1-4

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