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"Gate leakage currents modeling for oxynitride gate dielectric in double ..."

Salvador Ivan Garduño, Antonio Cerdeira, Magali Estrada (2011)

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DOI: 10.1109/ICEEE.2011.6106668

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-10

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  dblp key:
  - conf/iceee/GardunoCE11
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Salvador Ivan Garduño, Antonio Cerdeira, Magali Estrada:
Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. CCE 2011: 1-5

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