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"Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as ..."
Elisa Vianello et al. (2018)
- Elisa Vianello, Denys R. B. Ly
, Selina La Barbera, Thomas Dalgaty, Niccolo Castellani, Gabriele Navarro, Guillaume Bourgeois, Alexandre Valentian, Etienne Nowak, Damien Querlioz:
Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks. ICECS 2018: 561-564
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