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"A MOS transistor model for peak voltage calculation of crosstalk noise."

Patricia Renault, Pirouz Bazargan-Sabet, Dominique Le Dû (2002)

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DOI: 10.1109/ICECS.2002.1046284

access: closed

type: Conference or Workshop Paper

metadata version: 2021-01-15

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  dblp key:
  - conf/icecsys/RenaultBD02
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  - https://dblp.org/rec/conf/icecsys/RenaultBD02
Patricia Renault, Pirouz Bazargan-Sabet, Dominique Le Dû:
A MOS transistor model for peak voltage calculation of crosstalk noise. ICECS 2002: 773-776

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