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"Vacancy Modulated Analog Resistive Switching Memory Device Based on ..."

Muhammad Umair Khan, Baker Mohammad (2023)

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DOI: 10.1109/ICECS58634.2023.10382935

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

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Muhammad Umair Khan, Baker Mohammad:
Vacancy Modulated Analog Resistive Switching Memory Device Based on Bilayer of Zn@ZnO/ZnO for Neuromorphic Computing. ICECS 2023: 1-4

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