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"Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs."

Tomohiro Yoshida et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818832

access: closed

type: Conference or Workshop Paper

metadata version: 2022-01-03

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  dblp key:
  - conf/essderc/YoshidaKOS13
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  - https://dblp.org/rec/conf/essderc/YoshidaKOS13
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu:
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC 2013: 115-118

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