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"Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power ..."

Tsuyoshi Takahashi et al. (2019)

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DOI: 10.1109/ESSDERC.2019.8901802

access: closed

type: Conference or Workshop Paper

metadata version: 2022-03-02

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Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto:
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. ESSDERC 2019: 214-217

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