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"High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs ..."

Abel Fontserè et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343394

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

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Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309

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