"A 35 fJ/bit-access sub-VT memory using a dual-bit area-optimized ..."

Oskar Andersson et al. (2014)

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DOI: 10.1109/ESSCIRC.2014.6942067

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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Oskar Andersson, Babak Mohammadi, Pascal Andreas Meinerzhagen, Joachim Neves Rodrigues:
A 35 fJ/bit-access sub-VT memory using a dual-bit area-optimized standard-cell in 65 nm CMOS. ESSCIRC 2014: 243-246

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