Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI."

Fady Abouzeid et al. (2013)

> Home

Details and statistics

DOI: 10.1109/ESSCIRC.2013.6649108

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/esscirc/AbouzeidBACCR13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/esscirc/AbouzeidBACCR13
Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Sylvain Clerc, Lorenzo Ciampolini, Philippe Roche:
Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI. ESSCIRC 2013: 205-208

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.