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"3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low ..."
Jaeyeop Na, Kwansoo Kim (2022)
- Jaeyeop Na, Kwansoo Kim:
3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss. ICEIC 2022: 1-4
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