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"Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field ..."
Yuechao Zheng et al. (2022)
- Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE 2022: 605-610
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