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"High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain ..."

Han Wui Then et al. (2019)

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DOI: 10.1109/DRC46940.2019.9046449

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-21

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  dblp key:
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Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer:
High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). DRC 2019: 39-40

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