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"MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator."

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi (2021)

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DOI: 10.1109/DRC52342.2021.9467241

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-12

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  dblp key:
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Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator. DRC 2021: 1-2

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