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"High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer ..."

Gang Qiu et al. (2018)

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DOI: 10.1109/DRC.2018.8442253

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye:
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. DRC 2018: 1-2

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